The picture as a guide only. The Specifications are based on the datasheet (PDF).

NSVB114YPDXV6T1G

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Get $29 off orders over $999.

For orders over $2,999, get $160 off.

For orders over $6999, you will receive a $290 discount.

Manufacturer No:
NSVB114YPDXV6T1G
Manufacturer:
ON Semiconductor
Product Category:
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description:
TRANS BRT 50V 100MA SOT563
RoHs Status:
Lead Free / RoHS Compliant
Datasheet:
NSVB114YPDXV6T1G Datasheet(PDF)
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Purchase Instructions

Specifications

Product Category : Transistors - Bipolar (BJT) - Arrays, Pre-Biased Manufacturer : ON Semiconductor
Current - Collector (Ic) (Max) : 100mA Current - Collector Cutoff (Max) : 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Frequency - Transition : -
Mounting Type : Surface Mount Package / Case : SOT-563, SOT-666
Packaging : Tape & Reel (TR) Part Status : Obsolete
Power - Max : 500mW Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 47 kOhms Series : -
Supplier Device Package : SOT-563 Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max) : 50V

Inventory Quantity: 2628

MOQ: 0

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