The picture as a guide only. The Specifications are based on the datasheet (PDF).

RN2905FE,LF(CT

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Get $29 off orders over $999.

For orders over $2,999, get $160 off.

For orders over $6999, you will receive a $290 discount.

Manufacturer No:
RN2905FE,LF(CT
Manufacturer:
Toshiba Semiconductor and Storage
Product Category:
Transistors (BJT) - Arrays, Pre-Biased
Description:
TRANS 2PNP PREBIAS 0.1W ES6
RoHs Status:
Lead Free / RoHS Compliant
Datasheet:
RN2905FE,LF(CT Datasheet(PDF)
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Purchase Instructions

Specifications

Product Category : Transistors (BJT) - Arrays, Pre-Biased Manufacturer : Toshiba Semiconductor and Storage
Current - Collector (Ic) (Max) : 100mA Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Frequency - Transition : 200MHz
Mounting Type : Surface Mount Package / Case : SOT-563, SOT-666
Part Status : Active Power - Max : 100mW
Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 47 kOhms
Supplier Device Package : ES6 Transistor Type : 2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max) : 50V

Inventory Quantity: 0

MOQ: 4000

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