The picture as a guide only. The Specifications are based on the datasheet (PDF).

FP50R07N2E4B11BOSA1

Discount Get $29 off orders over $999. Down icon

Get $29 off orders over $999.

For orders over $2,999, get $160 off.

For orders over $6999, you will receive a $290 discount.

Manufacturer No:
FP50R07N2E4B11BOSA1
Manufacturer:
Infineon Technologies
Product Category:
Transistors - IGBTs - Modules
Description:
IGBT MODULE VCES 600V 50A
RoHs Status:
Lead Free / RoHS Compliant
Datasheet:
FP50R07N2E4B11BOSA1 Datasheet(PDF)
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Purchase Instructions

Specifications

Product Category : Transistors - IGBTs - Modules Manufacturer : Infineon Technologies
Configuration : Three Phase Inverter Current - Collector (Ic) (Max) : 70A
Current - Collector Cutoff (Max) : 1mA IGBT Type : Trench Field Stop
Input : Standard Input Capacitance (Cies) @ Vce : 3.1nF @ 25V
Mounting Type : Chassis Mount NTC Thermistor : Yes
Operating Temperature : -40°C ~ 150°C Package / Case : Module
Part Status : Active Power - Max : -
Series : - Supplier Device Package : Module
Vce(on) (Max) @ Vge, Ic : 1.95V @ 15V, 50A Voltage - Collector Emitter Breakdown (Max) : 650V

Inventory Quantity: 1268

MOQ: 10

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