The picture as a guide only. The Specifications are based on the datasheet (PDF).

SPB18P06P

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Get $29 off orders over $999.

For orders over $2,999, get $160 off.

For orders over $6999, you will receive a $290 discount.

Manufacturer No:
SPB18P06P
Manufacturer:
Infineon Technologies
Product Category:
Transistors - FETs, MOSFETs - Single
Description:
MOSFET P-CH 60V 18.7A D2PAK
RoHs Status:
Lead Free / RoHS Compliant
Datasheet:
SPB18P06P Datasheet(PDF)
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Purchase Instructions

Specifications

Product Category : Transistors - FETs, MOSFETs - Single Manufacturer : Infineon Technologies
Current - Continuous Drain (Id) @ 25°C : 18.7A (Ta) Drain to Source Voltage (Vdss) : 60V
Drive Voltage (Max Rds On, Min Rds On) : 10V FET Feature : -
FET Type : P-Channel Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 860pF @ 25V Mounting Type : Surface Mount
Operating Temperature : -55°C ~ 175°C (TJ) Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging : Tape & Reel (TR) Part Status : Obsolete
Power Dissipation (Max) : 81.1W (Ta) Rds On (Max) @ Id, Vgs : 130 mOhm @ 13.2A, 10V
Series : SIPMOS® Supplier Device Package : D²PAK (TO-263AB)
Technology : MOSFET (Metal Oxide) Vgs (Max) : ±20V
Vgs(th) (Max) @ Id : 4V @ 1mA

Inventory Quantity: 3460

MOQ: 0

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