The picture as a guide only. The Specifications are based on the datasheet (PDF).

PMV130ENEA/DG/B2R

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Get $29 off orders over $999.

For orders over $2,999, get $160 off.

For orders over $6999, you will receive a $290 discount.

Manufacturer No:
PMV130ENEA/DG/B2R
Manufacturer:
Nexperia USA Inc.
Product Category:
Transistors - FETs, MOSFETs - Single
Description:
MOSFET N-CH 40V 2.1A TO236AB
RoHs Status:
Lead Free / RoHS Compliant
Datasheet:
PMV130ENEA/DG/B2R Datasheet(PDF)
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Purchase Instructions

Specifications

Product Category : Transistors - FETs, MOSFETs - Single Manufacturer : Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C : 2.1A (Ta) Drain to Source Voltage (Vdss) : 40V
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V FET Feature : -
FET Type : N-Channel Gate Charge (Qg) (Max) @ Vgs : 3.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 170pF @ 20V Mounting Type : Surface Mount
Operating Temperature : -55°C ~ 150°C (TJ) Package / Case : TO-236-3, SC-59, SOT-23-3
Packaging : - Part Status : Obsolete
Power Dissipation (Max) : 5W (Tc) Rds On (Max) @ Id, Vgs : 120 mOhm @ 1.5A, 10V
Series : Automotive, AEC-Q101 Supplier Device Package : TO-236AB
Technology : MOSFET (Metal Oxide) Vgs (Max) : ±20V
Vgs(th) (Max) @ Id : 2.5V @ 250µA

Inventory Quantity: 2533

MOQ: 0

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