FCP190N65S3R0
- Manufacturer No:
- FCP190N65S3R0
- Manufacturer:
- ON Semiconductor
- Product Category:
- Transistors - FETs, MOSFETs - Single
- Description:
- MOSFET N-CH 650V 190MOHM TO220 I
- RoHs Status:
Lead Free / RoHS Compliant
- Datasheet:
-
FCP190N65S3R0 Datasheet(PDF)
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Purchase Instructions
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Specifications
| Product Category : | Transistors - FETs, MOSFETs - Single | Manufacturer : | ON Semiconductor |
| Current - Continuous Drain (Id) @ 25°C : | 17A (Tc) | Drain to Source Voltage (Vdss) : | 650V |
| Drive Voltage (Max Rds On, Min Rds On) : | 10V | FET Feature : | - |
| FET Type : | N-Channel | Gate Charge (Qg) (Max) @ Vgs : | 33nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds : | 1350pF @ 400V | Mounting Type : | Through Hole |
| Operating Temperature : | -55°C ~ 150°C (TJ) | Package / Case : | TO-220-3 |
| Packaging : | - | Part Status : | Active |
| Power Dissipation (Max) : | 144W (Tc) | Rds On (Max) @ Id, Vgs : | 190 mOhm @ 8.5A, 10V |
| Series : | SuperFET® III | Supplier Device Package : | TO-220-3 |
| Technology : | MOSFET (Metal Oxide) | Vgs (Max) : | ±30V |
| Vgs(th) (Max) @ Id : | 4.5V @ 1.7mA |
Inventory Quantity: 1996
MOQ: 800
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