The picture as a guide only. The Specifications are based on the datasheet (PDF).

NP110N03PUG-E1-AY

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Manufacturer No:
NP110N03PUG-E1-AY
Manufacturer:
Renesas Electronics America
Product Category:
Transistors - FETs, MOSFETs - Single
Description:
MOSFET N-CH 30V MP-25ZP/TO-263
RoHs Status:
Lead Free / RoHS Compliant
Datasheet:
NP110N03PUG-E1-AY Datasheet(PDF)
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Specifications

Product Category : Transistors - FETs, MOSFETs - Single Manufacturer : Renesas Electronics America
Current - Continuous Drain (Id) @ 25°C : 110A (Tc) Drain to Source Voltage (Vdss) : 30V
Drive Voltage (Max Rds On, Min Rds On) : 10V FET Feature : -
FET Type : N-Channel Gate Charge (Qg) (Max) @ Vgs : 380nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 24600pF @ 25V Mounting Type : Surface Mount
Operating Temperature : 175°C (TJ) Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging : Tape & Reel (TR) Part Status : Active
Power Dissipation (Max) : 1.8W (Ta), 288W (Tc) Rds On (Max) @ Id, Vgs : 1.5 mOhm @ 55A, 10V
Series : - Supplier Device Package : TO-263
Technology : MOSFET (Metal Oxide) Vgs (Max) : ±20V
Vgs(th) (Max) @ Id : 4V @ 250µA

Inventory Quantity: 2302

MOQ: 0

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